![]() ![]() Low variability in synthetic monolayer MoS 2 devices. Intrinsic electrical transport and performance projections of synthetic monolayer MoS 2 devices. Oxide semiconductor thin‐film transistors: a review of recent advances. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions. Improved contacts to MoS 2 transistors by ultra-high vacuum metal deposition. High current density in monolayer MoS 2 doped by AlO x. Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation. Highly flexible and high‐performance complementary inverters of large‐area transition metal dichalcogenide monolayers. Simultaneous optical tuning of hole and electron transport in ambipolar WSe 2 interfaced with a bicomponent photochromic layer: from high‐mobility transistors to flexible multilevel memories. High-mobility field-effect transistors based on transition metal dichalcogenides. Podzorov, V., Gershenson, M., Kloc, C., Zeis, R. All two-dimensional, flexible, transparent and thinnest thin film transistor. Large‐area monolayer MoS 2 for flexible low‐power RF nanoelectronics in the GHz regime. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics. Clean transfer of 2D transition metal dichalcogenides using cellulose acetate for atomic resolution characterizations. A universal etching-free transfer of MoS 2 films for applications in photodetectors. Highly flexible MoS 2 thin-film transistors with ion gel dielectrics. Fabrication and AC performance of flexible indium–gallium–zinc–oxide thin-film transistors. ![]() 2018 76th Device Research Conference ( DRC) (IEEE, 2018). Annealing and encapsulation of CVD-MoS 2 FETs with 10 10 on/off current ratio. Dynamic memory cells using MoS 2 field-effect transistors demonstrating femtoampere leakage currents. Monolayer MoS 2 bandgap modulation by dielectric environments and tunable bandgap transistors. Electronic properties of bulk and monolayer TMDs: theoretical study within DFT framework (GVJ‐2e method). MoS 2 field-effect transistor with sub-10-nm channel length. Surface-energy-assisted perfect transfer of centimeter-scale monolayer and few-layer MoS 2 films onto arbitrary substrates. Fabrication and transfer of flexible few-layers MoS 2 thin film transistors to any arbitrary substrate. The development of flexible integrated circuits based on thin-film transistors. Two-dimensional flexible nanoelectronics. Inorganic materials and assembly techniques for flexible and stretchable electronics. We also show that the approach can be used to create flexible FETs based on molybdenum diselenide (MoSe 2) and tungsten diselenide (WSe 2). Despite the low thermal conductivity of the flexible substrate, we find that heat spreading through the metal gate and contacts is essential to reach such high current densities. Transistors based on monolayer molybdenum disulfide (MoS 2) are created with channel lengths down to 60 nm and on-state currents up to 470 μA μm −1 at a drain–source voltage of 1 V, which is comparable to the performance of flexible graphene and crystalline silicon FETs. Here, we report flexible nanoscale FETs based on 2D semiconductors these are fabricated by transferring chemical-vapour-deposited transition metal dichalcogenides from rigid growth substrates together with nano-patterned metal contacts, using a polyimide film, which becomes the flexible substrate after release. However, flexible field-effect transistors (FETs) based on such materials are typically fabricated with channel lengths on the micrometre scale, not benefitting from the short-channel advantages of 2D materials. Two-dimensional (2D) semiconducting transition metal dichalcogenides could be used to build high-performance flexible electronics. ![]()
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